, u na. 20 stern ave. springfield, new jersey 07081 u s a silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 MJF13009 description ? collector-emitter sustaining voltage : vceo(sus) = 400v(min.) ? collector saturation voltage :vce(sat) = 1.5(max)@lc=8.0a ? switching time : tf= 0.7 u s(max.)@ lc= 8.0a applications ? designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220v switchmode applications such as switching regulators, inverters, motor controls.solenoid/relay drivers and deflection circuits. absolute maximum ratings(ta=25c) symbol vcev vceo vebo ic icm ib '|bm pc ti tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current base current-peak collector power dissipation tc=25'c junction temperature storage temperature range value 700 400 9 12 24 6 12 50 150 -65-150 unit v v v a a a a w 'c ?c thermal characteristics symbol rth j-c rth j-a parameter max thermal resistance.junction to case 2.5 thermal resistance.junction to ambient 62.5 unit ?c/w ?c/w 2 ww 3 f f?f' pin t.base 2. collector 3. emitter 1 2 3 to-220f package b - - c - -s- f \ ;-,. o q *:" ~~"r -n~~7n' ?,- - ' ' . u; i ; " r n v--' .-. [':?' ,..:-:j -..,v ; a ' ? 1 1 >? ' ?.*-? 'i ?..^^~?t-?-^?. < u --? h o ' l , . , . , ' - r ? -,-..,;, k ; : - -d j ., - h ?? mm dim min max a 14.95 15.05 b 10.00 10.10 c 4.40 4.60 d 0.75 0.80 f 3.10 3.30 h 3.70 3.90 j 0.50 0.70 * k 13.4 13.6 l 1.10 1.30 n 5.00 5.20 c! 2.70 2.90 r 2.20 2.40 s 2.65 2 85 u4 6.40 6.60 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJF13009 electrical characteristics tc =25'c unless otherwise specified symbol vceo(sus) vce(sat)-i vce(sat)-2 vce(sat)-3 vbe(sat)-1 vbe(sat)-2 icev iebo hpe-1 hpe-2 fr cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain?bandwidth product output capacitance conditions lc=10ma; ib= 0 ic=5a;ib=1a lc=8a;lb=1.6a ic=12a;ib=3a ic=5a;ib=1a ic=8a;ib=1.6a vcev= 700v vbe(off)= 1 5v tc=100'c veb= 9v; lc= 0 lc= 5a; vce= 5v lc= 8a; vce= 5v lc=0.5a;vce=10v; ie= 0; vcb= 10v; ftest = 0.1 mhz min 400 8 6 4 typ. 180 max 1.0 1.5 3.0 1.2 1.6 1 5 1 40 30 unit v v v v v v ma ma mhz pf switching times; resistive load ton ts tf storage time storage time fall time ic- 8a; vgc- 1 25v; lsi= lb2= 1.6a; tp=25us; duty cycled 1% 1.1 3.0 0.7 us us us
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